Investigation of the Compact Thermal Modeling of SiC-Based Power MOSFETs

This paper discusses the advantages offered by a circuit-based approach in performing electrothermal simulations of multicellular power MOSFETs. It is shown that the I-V characteristics and the bias-dependent average temperature in the power dissipation region(s) can be determined with high accuracy in a negligible CPU time. It is also found that the results are almost insensitive to the choice of the heat source(s) model under steady-state conditions.