Optimization of SDD X-Ray performance at short shaping times by using a charge preamplifier in 65nm technology

High count rate X-Ray measurements, as the ones accomplished in synchrotron facilities, make extensive use of Silicon Drift Detectors (SDDs) for their good resolution at short shaping times. For furthermore increasing the resolution of this detectors in this operation regime, an optimized charge preamplifier must be customly designed. In this work, we present a new ASIC Charge Sensitive Amplifier (CSA) having the specific scope in achieving low noise at very low shaping times e.g. between 30ns and 100ns. After noise optimization, the aforementioned CSA shows an Equivalent Noise Charge ENC=9.5e − at 30ns. This value at short shaping times has been achieved by exploiting the advantages of the 65nm technology node. Finally, after a brief introduction on the challenges that we faced in the optimization of the ENC, we report a comparison between this CSA and the CUBE preamplifier at short shaping times. Also the challenges associated to the typical ballistic deficit in SDDs related to the spread of the charge during drift are discussed in this work. We expect to show preliminar measurements of this new SDD-CSA combination at the conference.