High-sensitivity transparent photoconductors in voltage-controlled silicon waveguides

On-chip optical power monitors are essential elements to calibrate, stabilize, and reconfigure photonic integrated circuits. Many applications require in-linewaveguide detectors, where a trade-off has to be found between large sensitivity and high transparency to the guided light. In this work, we demonstrate a transparent photoconductor integrated on standard low-doped silicon-on-insulator waveguides that reaches a photoconductive gain of more than 106 and an in-line sensitivity as high as -60 dBm. This performance is achieved by compensating the effect of electric charges in the cladding oxide through a bias voltage applied to the chip substrate or locally through a gate electrode on top of the waveguide, allowing one to tune on demand the conductivity of the core to the optimum level.