RTN and Its Intrinsic Interaction with Statistical Variability Sources in Advanced Nano-Scale Devices: A Simulation Study

Random telegraph noise (RTN) has been long debated in many theoretical and experimental studies. Its detrimental effect on the reliability of semiconductor devices is well documented. In particular its effect is exasperated in advanced nano-scale devices. In this book chapter, we navigate through some of the important effects of RTN in advanced MOS devices in detail. The amplitude of RTN fluctuation (in terms of current and threshold voltage) associated with the trapping of electrons in defect states at the Si/SiO2 interface and inside the gate oxide is investigated via numerical simulation. The intrinsic interplay between the RTN trap and random discrete dopants and their combined effect on the threshold voltage shift and the capture and emission time constants is discussed. Additionally, the limitations to the accuracy of spectroscopic analyses of RTN are examined based on the fluctuation of time constants in the presence of statistical variability effects. In this study three device architectures (conventional bulk MOSFET, fully depleted silicon-on-insulator MOSFET (FDSOI), and 14 nm FinFET) have been used as test vehicles representative of advanced MOS technologies.