Carbyne and linear carbon structures based on sp-hybridization are attractive targets as the ultimate one-dimensional system (i.e., one-atom in diameter) featuring wide tunability of optical and electronic properties. Two possible structures exist for sp-carbon atomic wires: (a) the polyynes with alternated single-triple bonds and (b) the cumulenes with contiguous double bonds. Theoretical studies predict semiconducting behavior for polyynes, while cumulenes are expected to be metallic. Very limited experimental work, however, has been directed toward investigating the electronic properties of these structures, mostly at the single-molecule or monolayer level. However, sp-carbon atomic wires hold great potential for solution-processed thin-film electronics, an avenue not exploited to date. Herein, we report the first field-effect transistor (FET) fabricated employing cumulenic sp-carbon atomic wires as a semiconductor material. Our proof-of-concept FET device is easily fabricated by solution drop casting and paves the way for exploiting sp-carbon atomic wires as active electronic materials.

A Field-Effect Transistor Based on Cumulenic sp-Carbon Atomic Wires

Scaccabarozzi A. D.;Milani A.;Peggiani S.;Pecorario S.;Caironi M.;Casari C. S.
2020-01-01

Abstract

Carbyne and linear carbon structures based on sp-hybridization are attractive targets as the ultimate one-dimensional system (i.e., one-atom in diameter) featuring wide tunability of optical and electronic properties. Two possible structures exist for sp-carbon atomic wires: (a) the polyynes with alternated single-triple bonds and (b) the cumulenes with contiguous double bonds. Theoretical studies predict semiconducting behavior for polyynes, while cumulenes are expected to be metallic. Very limited experimental work, however, has been directed toward investigating the electronic properties of these structures, mostly at the single-molecule or monolayer level. However, sp-carbon atomic wires hold great potential for solution-processed thin-film electronics, an avenue not exploited to date. Herein, we report the first field-effect transistor (FET) fabricated employing cumulenic sp-carbon atomic wires as a semiconductor material. Our proof-of-concept FET device is easily fabricated by solution drop casting and paves the way for exploiting sp-carbon atomic wires as active electronic materials.
2020
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1134440
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