This paper presents an extensive analysis aimed at quantifying the impact of all the key layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs. The investigation is conducted by resorting to accurate 3-D numerical simulations performed in accordance to the Design Of Experiments technique.

Influence of layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs

Codecasa, L.;
2017-01-01

Abstract

This paper presents an extensive analysis aimed at quantifying the impact of all the key layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs. The investigation is conducted by resorting to accurate 3-D numerical simulations performed in accordance to the Design Of Experiments technique.
2017
PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings
9781509065073
Design Of Experiments (DOE); finite-element method (FEM); heterojunction bipolar transistor (HBT); thermal resistance; Electrical and Electronic Engineering; Instrumentation
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1046847
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