This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs HBTs for handset applications in a laminate (package) environment. Both wire-bonding and flip-chip technologies are examined. The combination between an accurate, yet fast, simulation capability and the Design of Experiments technique is employed to quantify the impact of all the key technology parameters and explore a wide range of operating conditions.

Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies

Codecasa, Lorenzo;
2017-01-01

Abstract

This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs HBTs for handset applications in a laminate (package) environment. Both wire-bonding and flip-chip technologies are examined. The combination between an accurate, yet fast, simulation capability and the Design of Experiments technique is employed to quantify the impact of all the key technology parameters and explore a wide range of operating conditions.
2017
Design of Experiments (DOE); Finite-element method (FEM); Flip-chip (FC); Gallium arsenide (GaAs); Heterojunction bipolar transistor (HBT); Laminate technology; Thermal resistance; Wire-bonding (WB); Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics; Condensed Matter Physics; Safety, Risk, Reliability and Quality; Surfaces, Coatings and Films; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1046843
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