This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs HBTs in a laminate (package) environment. The combination between the Design of Experiments technique and a fast and accurate simulation capability is adopted to quantify the impact of all the key technology parameters and explore a wide range of operating conditions.

Numerical Analysis of the Thermal Behavior Sensitivity to Technology Parameters and Operating Conditions in InGaP/GaAs HBTs

Codecasa, L;
2017-01-01

Abstract

This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs HBTs in a laminate (package) environment. The combination between the Design of Experiments technique and a fast and accurate simulation capability is adopted to quantify the impact of all the key technology parameters and explore a wide range of operating conditions.
2017
IEEE Compound Semiconductor IC Symposium (CSICS) 2017
Design Of Experiments (DOE); finite-element method (FEM); heterojunction bipolar transistor (HBT); laminate technology; thermal resistance
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1046842
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 3
social impact