Recent experiments demonstrated that chiral symmetry breaking at an exceptional point (EP) is a viable route to achieve unidirectional laser emission in microring lasers. By a detailed semiconductor laser rate equation model, we show here that unidirectional laser emission at an EP is a robust regime. Slight deviations from the EP condition can break preferential unidirectional lasing near threshold via a Hopf instability. However, above a “second” laser threshold, unidirectional emission is restored.

Unidirectional lasing in semiconductor microring lasers at an exceptional point [invited]

Longhi, Stefano;
2017-01-01

Abstract

Recent experiments demonstrated that chiral symmetry breaking at an exceptional point (EP) is a viable route to achieve unidirectional laser emission in microring lasers. By a detailed semiconductor laser rate equation model, we show here that unidirectional laser emission at an EP is a robust regime. Slight deviations from the EP condition can break preferential unidirectional lasing near threshold via a Hopf instability. However, above a “second” laser threshold, unidirectional emission is restored.
2017
Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1040099
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