3-D thermal analyses of state-of-The-Art silicon-germanium heterojunction bipolar transistors are performed with the aim of improving the simulation accuracy with respect to conventional approaches. Toward this goal, a nonuniform heat source obtained from calibrated electrical simulation results is considered, and thermal conductivity variations due to germanium mole fraction, doping profile, and thin-layer effects are accounted for. The cooling action of the backend metallization due to the upward heat flow, which is commonly disregarded, is then quantified for each layer.
Advanced thermal resistance simulation of SiGe HBTs including backend cooling effect
CODECASA, LORENZO;
2015-01-01
Abstract
3-D thermal analyses of state-of-The-Art silicon-germanium heterojunction bipolar transistors are performed with the aim of improving the simulation accuracy with respect to conventional approaches. Toward this goal, a nonuniform heat source obtained from calibrated electrical simulation results is considered, and thermal conductivity variations due to germanium mole fraction, doping profile, and thin-layer effects are accounted for. The cooling action of the backend metallization due to the upward heat flow, which is commonly disregarded, is then quantified for each layer.File in questo prodotto:
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