PACELLI, ANDREA
PACELLI, ANDREA
An improved formula for the determination of the polysilicon doping
2001-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Pacelli, Andrea; Lacaita, ANDREA LEONARDO
Carrier quantization at flat bands in MOS devices
1999-01-01 Pacelli, Andrea; SOTTOCORNOLA SPINELLI, Alessandro; Perron, LAURA MARIA
Dead space approximation for impact ionization in silicon
1996-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Pacelli, Andrea; Lacaita, ANDREA LEONARDO
Effect of N2O nitridation on the eletrical properties of MOS gate oxides
1998-01-01 Pacelli, Andrea; Lacaita, ANDREA LEONARDO; SOTTOCORNOLA SPINELLI, Alessandro; R., Bez
Impact ionization in silicon: A microscopic view
1998-01-01 Pacelli, Andrea; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO
Polysilicon quantization effects on the electrical properties of MOS transistors
2000-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Pacelli, Andrea; Lacaita, ANDREA LEONARDO
Self-Consistent 2-D Model for Quantum Effects in n-MOS Transistors
1998-01-01 SOTTOCORNOLA SPINELLI, Alessandro; A., Benvenuti; Pacelli, Andrea
Simulation of polysilicon quantization and its effect on n-and p-MOSFET performance
2002-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Pacelli, Andrea; Lacaita, ANDREA LEONARDO