PACELLI, ANDREA
 Distribuzione geografica
Continente #
NA - Nord America 482
EU - Europa 150
AS - Asia 23
OC - Oceania 1
Totale 656
Nazione #
US - Stati Uniti d'America 478
AT - Austria 40
SE - Svezia 39
UA - Ucraina 22
VN - Vietnam 16
IT - Italia 15
FI - Finlandia 13
DE - Germania 10
CN - Cina 7
CA - Canada 4
BE - Belgio 3
GB - Regno Unito 3
IE - Irlanda 3
AU - Australia 1
CH - Svizzera 1
NL - Olanda 1
Totale 656
Città #
Fairfield 83
Woodbridge 56
Chandler 48
Houston 41
Vienna 40
Wilmington 38
Cambridge 32
Seattle 31
Ashburn 29
Ann Arbor 16
Jacksonville 13
Dearborn 11
Lawrence 9
Medford 9
Des Moines 6
Dong Ket 6
San Diego 6
Beijing 4
Helsinki 4
Ottawa 4
Brussels 3
Dublin 3
New York 3
Kunming 2
Amsterdam 1
Boardman 1
Brisbane 1
Como 1
Milan 1
Prescot 1
Tallahassee 1
Washington 1
Wuhan 1
Zurich 1
Totale 507
Nome #
An improved formula for the determination of the polysilicon doping 85
Dead space approximation for impact ionization in silicon 81
Carrier quantization at flat bands in MOS devices 76
Investigation of quantum effects in highly-doped MOSFETs by means of a self-consistent 2D model 74
Polysilicon quantization effects on the electrical properties of MOS transistors 72
Simulation of polysilicon quantization and its effect on n-and p-MOSFET performance 72
Self-Consistent 2-D Model for Quantum Effects in n-MOS Transistors 71
Impact ionization in silicon: A microscopic view 69
Effect of N2O nitridation on the eletrical properties of MOS gate oxides 57
Totale 657
Categoria #
all - tutte 1.671
article - articoli 1.503
book - libri 0
conference - conferenze 168
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.342


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201967 0 0 0 0 0 0 0 0 0 0 39 28
2019/2020176 9 7 2 19 22 24 25 18 22 10 12 6
2020/202197 8 7 13 2 9 7 4 7 8 5 9 18
2021/202267 6 1 2 1 18 6 2 0 7 7 2 15
2022/2023100 9 2 2 15 15 18 0 7 19 1 10 2
2023/202418 2 8 2 3 1 1 0 0 0 1 0 0
Totale 657