PACELLI, ANDREA
 Distribuzione geografica
Continente #
NA - Nord America 546
EU - Europa 266
AS - Asia 111
SA - Sud America 42
AF - Africa 5
OC - Oceania 1
Totale 971
Nazione #
US - Stati Uniti d'America 538
RU - Federazione Russa 109
SG - Singapore 52
AT - Austria 40
SE - Svezia 39
BR - Brasile 38
CN - Cina 29
UA - Ucraina 23
VN - Vietnam 19
IT - Italia 17
FI - Finlandia 13
DE - Germania 11
CA - Canada 8
IN - India 5
GB - Regno Unito 4
BE - Belgio 3
IE - Irlanda 3
AR - Argentina 2
BD - Bangladesh 2
SA - Arabia Saudita 2
ZA - Sudafrica 2
AU - Australia 1
BO - Bolivia 1
CH - Svizzera 1
ES - Italia 1
IQ - Iraq 1
KE - Kenya 1
MA - Marocco 1
NL - Olanda 1
PL - Polonia 1
TN - Tunisia 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 971
Città #
Fairfield 83
Woodbridge 56
Chandler 48
Houston 42
Vienna 40
Wilmington 38
Ashburn 32
Cambridge 32
Seattle 31
Singapore 22
Ann Arbor 16
Moscow 16
Jacksonville 13
Dearborn 11
Santa Clara 11
Beijing 10
Boardman 10
Lawrence 9
Medford 9
Council Bluffs 7
New York 7
Buffalo 6
Des Moines 6
Dong Ket 6
San Diego 6
Helsinki 4
Los Angeles 4
Ottawa 4
Brasília 3
Brussels 3
Dublin 3
São Paulo 3
Belo Horizonte 2
Contagem 2
Durban 2
Joinville 2
Kunming 2
Milan 2
Porto Alegre 2
Amsterdam 1
Atlanta 1
Baghdad 1
Balneário Camboriú 1
Baoding 1
Bauru 1
Bertioga 1
Bilhorod-Dnistrovskyi 1
Boa Esperança 1
Botucatu 1
Brisbane 1
Casablanca 1
Caxias do Sul 1
Ceres 1
Clifton 1
Como 1
Da Nang 1
Dhaka 1
Formiga 1
Fort Lauderdale 1
Fátima do Sul 1
Gmina Zakliczyn 1
Goiânia 1
Guaratinguetá 1
Guarulhos 1
Hanoi 1
Itaipé 1
Içara 1
Jeddah 1
Ji Paraná 1
Jinjiang 1
Jundiaí 1
Khulna 1
La Paz 1
Lucknow 1
Ludhiana 1
Manchester 1
Mariano Moreno 1
Mathura 1
Miami 1
Montes Claros 1
Montevideo 1
Montreal 1
Nairobi 1
Nantong 1
New Delhi 1
Nova Iguaçu 1
Novo Hamburgo 1
Orem 1
Palmdale 1
Pingdingshan 1
Prescot 1
Pune 1
Qingdao 1
Quận Bình Thạnh 1
Raleigh 1
Richmond Hill 1
Rio de Janeiro 1
Riyadh 1
Salvador 1
Sant Andreu de la Barca 1
Totale 666
Nome #
Dead space approximation for impact ionization in silicon 120
An improved formula for the determination of the polysilicon doping 113
Investigation of quantum effects in highly-doped MOSFETs by means of a self-consistent 2D model 111
Self-Consistent 2-D Model for Quantum Effects in n-MOS Transistors 110
Carrier quantization at flat bands in MOS devices 110
Polysilicon quantization effects on the electrical properties of MOS transistors 108
Simulation of polysilicon quantization and its effect on n-and p-MOSFET performance 105
Impact ionization in silicon: A microscopic view 98
Effect of N2O nitridation on the eletrical properties of MOS gate oxides 97
Totale 972
Categoria #
all - tutte 2.900
article - articoli 2.610
book - libri 0
conference - conferenze 290
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.800


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202158 0 0 0 0 0 7 4 7 8 5 9 18
2021/202267 6 1 2 1 18 6 2 0 7 7 2 15
2022/2023100 9 2 2 15 15 18 0 7 19 1 10 2
2023/202423 2 8 2 3 1 1 0 0 0 1 0 5
2024/2025106 2 0 1 1 9 12 5 23 17 1 20 15
2025/2026204 81 66 11 27 18 1 0 0 0 0 0 0
Totale 972