PACELLI, ANDREA
 Distribuzione geografica
Continente #
NA - Nord America 517
EU - Europa 153
AS - Asia 60
SA - Sud America 35
AF - Africa 1
OC - Oceania 1
Totale 767
Nazione #
US - Stati Uniti d'America 510
AT - Austria 40
SE - Svezia 39
BR - Brasile 33
SG - Singapore 30
UA - Ucraina 23
IT - Italia 16
VN - Vietnam 16
FI - Finlandia 13
DE - Germania 11
CN - Cina 9
CA - Canada 7
BE - Belgio 3
GB - Regno Unito 3
IE - Irlanda 3
IN - India 2
AU - Australia 1
BD - Bangladesh 1
BO - Bolivia 1
CH - Svizzera 1
MA - Marocco 1
NL - Olanda 1
SA - Arabia Saudita 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 767
Città #
Fairfield 83
Woodbridge 56
Chandler 48
Houston 41
Vienna 40
Wilmington 38
Cambridge 32
Seattle 31
Ashburn 30
Ann Arbor 16
Singapore 16
Jacksonville 13
Dearborn 11
Boardman 10
Lawrence 9
Medford 9
Santa Clara 9
Council Bluffs 7
Des Moines 6
Dong Ket 6
San Diego 6
Beijing 5
Helsinki 4
Ottawa 4
Brasília 3
Brussels 3
Dublin 3
New York 3
São Paulo 3
Belo Horizonte 2
Contagem 2
Joinville 2
Kunming 2
Porto Alegre 2
Amsterdam 1
Bauru 1
Bilhorod-Dnistrovskyi 1
Boa Esperança 1
Botucatu 1
Brisbane 1
Casablanca 1
Ceres 1
Clifton 1
Como 1
Formiga 1
Fort Lauderdale 1
Fátima do Sul 1
Goiânia 1
Guaratinguetá 1
Guarulhos 1
Içara 1
Ji Paraná 1
Khulna 1
La Paz 1
Lucknow 1
Milan 1
Montes Claros 1
Montevideo 1
Nova Iguaçu 1
Novo Hamburgo 1
Prescot 1
Pune 1
Richmond Hill 1
Rio de Janeiro 1
Riyadh 1
Salvador 1
Senhor do Bonfim 1
Shanghai 1
São José dos Pinhais 1
Tallahassee 1
Tashkent 1
Uberlândia 1
Washington 1
Wuhan 1
Zurich 1
Águas Lindas de Goiás 1
Totale 597
Nome #
Dead space approximation for impact ionization in silicon 100
An improved formula for the determination of the polysilicon doping 93
Self-Consistent 2-D Model for Quantum Effects in n-MOS Transistors 86
Carrier quantization at flat bands in MOS devices 86
Investigation of quantum effects in highly-doped MOSFETs by means of a self-consistent 2D model 86
Polysilicon quantization effects on the electrical properties of MOS transistors 83
Simulation of polysilicon quantization and its effect on n-and p-MOSFET performance 81
Impact ionization in silicon: A microscopic view 78
Effect of N2O nitridation on the eletrical properties of MOS gate oxides 75
Totale 768
Categoria #
all - tutte 2.345
article - articoli 2.111
book - libri 0
conference - conferenze 234
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.690


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20206 0 0 0 0 0 0 0 0 0 0 0 6
2020/202197 8 7 13 2 9 7 4 7 8 5 9 18
2021/202267 6 1 2 1 18 6 2 0 7 7 2 15
2022/2023100 9 2 2 15 15 18 0 7 19 1 10 2
2023/202423 2 8 2 3 1 1 0 0 0 1 0 5
2024/2025106 2 0 1 1 9 12 5 23 17 1 20 15
Totale 768