FAVERZANI, MARCO

FAVERZANI, MARCO  

DIPARTIMENTO DI FISICA  

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Risultati 1 - 6 di 6 (tempo di esecuzione: 0.008 secondi).
Titolo Data di pubblicazione Autori File
Hyperdoping of Ge/Si and SiGe/Si epitaxial layers by UV-nanosecond laser processing 1-gen-2025 Faverzani, MarcoImpelluso, DavideCalcaterra, StefanoBiagioni, PaoloFrigerio, Jacopo +
Mid‐Infrared Intersubband Transitions in p‐Type SiGe Parabolic Quantum Wells 1-gen-2025 Faverzani, MarcoImpelluso, DavideCalcaterra, StefanoZucchetti, CarloChrastina, DanielBiagioni, PaoloIsella, GiovanniVirgilio, MicheleFrigerio, Jacopo +
Optical and structural properties of p-doped Ge/SiGe multiple quantum wells for mid-infrared photonics 1-gen-2025 Calcaterra, StefanoFaverzani, MarcoImpelluso, DavideChrastina, DanielGiani, RaffaeleAnzi, LucaBiagioni, PaoloIsella, GiovanniVirgilio, MicheleFrigerio, Jacopo +
Pulse Generation by On‐Chip Dispersion Compensation at 8 µm Wavelength 1-gen-2025 Calcaterra, StefanoImpelluso, DavideFaverzani, MarcoFrigerio, JacopoIsella, Giovanni +
Strong coupling in metal-semiconductor microcavities featuring Ge quantum wells: a perspective study 1-gen-2024 Faverzani, MarcoCalcaterra, StefanoBiagioni, PaoloFrigerio, Jacopo
Thermal stability of hyper-doped n-type Ge and Si0.15Ge0.85 epilayers obtained by in situ doping and pulsed laser melting 1-gen-2025 Faverzani, MarcoImpelluso, DavideCalcaterra, StefanoCanepa, MaurizioBiagioni, PaoloIsella, GiovanniFrigerio, Jacopo +