In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.
Strong coupling in metal-semiconductor microcavities featuring Ge quantum wells: a perspective study
Faverzani, Marco;Calcaterra, Stefano;Biagioni, Paolo;Frigerio, Jacopo
2024-01-01
Abstract
In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.File in questo prodotto:
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10.1515_nanoph-2023-0730.pdf
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