GHIDOTTI, MICHELE
 Distribuzione geografica
Continente #
NA - Nord America 635
EU - Europa 192
AS - Asia 70
SA - Sud America 14
Totale 911
Nazione #
US - Stati Uniti d'America 625
UA - Ucraina 43
SG - Singapore 34
AT - Austria 30
IT - Italia 29
DE - Germania 25
FI - Finlandia 13
VN - Vietnam 13
BR - Brasile 12
ES - Italia 11
CN - Cina 10
GB - Regno Unito 10
SE - Svezia 10
CA - Canada 9
IE - Irlanda 9
KR - Corea 4
BE - Belgio 3
HU - Ungheria 3
IN - India 3
FR - Francia 2
TR - Turchia 2
BO - Bolivia 1
CL - Cile 1
CZ - Repubblica Ceca 1
HK - Hong Kong 1
IS - Islanda 1
JP - Giappone 1
LV - Lettonia 1
MX - Messico 1
NL - Olanda 1
OM - Oman 1
TW - Taiwan 1
Totale 911
Città #
Fairfield 91
Houston 58
Woodbridge 53
Chandler 51
Cambridge 46
Wilmington 40
Ashburn 36
Seattle 31
Vienna 30
Singapore 28
Ann Arbor 27
Jacksonville 25
Santa Clara 16
Dearborn 12
Málaga 10
Boardman 9
Council Bluffs 9
Dublin 9
Lawrence 9
Medford 9
Ottawa 9
Washington 6
Des Moines 5
Frankfurt am Main 4
Milan 4
New York 4
San Diego 4
Beijing 3
Brussels 3
Budapest 3
Dong Ket 3
Helsinki 3
London 3
Redwood City 3
Fort Worth 2
Los Angeles 2
Redmond 2
Ankara 1
Arroio Grande 1
Atlanta 1
Auburn Hills 1
Bangalore 1
Boston 1
Bresso 1
Cachoeirinha 1
Campinas 1
Chiswick 1
Clifton 1
Columbus 1
Duncan 1
Estância Velha 1
Fortaleza 1
Grafing 1
Harrisburg 1
Itabira 1
Ituiutaba 1
Kumar 1
Kunming 1
Lençóis Paulista 1
Lubbock 1
Mexico City 1
Miami 1
Muscat 1
Nanjing 1
Norwalk 1
Papagaios 1
Phoenix 1
Pohang 1
Poços de Caldas 1
Prescot 1
Reston 1
Reykjavik 1
Ribeirão das Neves 1
Richardson 1
Riga 1
Santa Cruz 1
Santiago 1
Seoul 1
São Leopoldo 1
Taipei 1
Turku 1
Valladolid 1
Verona 1
Çankaya 1
Totale 709
Nome #
RTN effects in scaled Flash memory arrays 141
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays 122
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 107
Investigation of the random telegraph noise instability in scaled Flash memory arrays 98
Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories 96
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories 94
Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories 93
Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories 92
Investigation of the electron-injection spread in barrier-engineered NAND Flash memories 91
Totale 934
Categoria #
all - tutte 3.109
article - articoli 1.619
book - libri 0
conference - conferenze 1.490
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.218


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202028 0 0 0 0 0 0 0 0 0 0 20 8
2020/2021118 14 4 10 7 14 7 8 11 8 13 6 16
2021/202294 4 17 11 1 14 3 5 5 4 2 13 15
2022/2023109 10 4 2 15 10 19 0 11 18 11 8 1
2023/202459 4 14 2 7 2 5 1 0 1 14 0 9
2024/2025111 1 2 1 3 20 17 1 23 18 2 23 0
Totale 934