We present a CMOS Charge Sensitive Amplifier (CSA) specifically designed for low capacitance pixel or silicon drift detectors for high resolution X-ray spectrometry. The intrinsic noise of the CSA has been measured at different operating temperatures with a triangular shaping with peaking time from 0.8 μs to 102 μs. At room temperature, the intrinsic Equivalent Noise Charge (ENC) shows a minimum of 1.18 e- r.m.s. and at -30°C a minimum ENC of 0.89 e- r.m.s. has been measured, corresponding to a line width of 7.8 eV FWHM for a Silicon detector.
A CMOS Charge Sensitive Amplifier with sub-electron equivalent noise charge
BERTUCCIO, GIUSEPPE;MACERA, DANIELE;AHANGARIANABHARI, MAHDI
2014-01-01
Abstract
We present a CMOS Charge Sensitive Amplifier (CSA) specifically designed for low capacitance pixel or silicon drift detectors for high resolution X-ray spectrometry. The intrinsic noise of the CSA has been measured at different operating temperatures with a triangular shaping with peaking time from 0.8 μs to 102 μs. At room temperature, the intrinsic Equivalent Noise Charge (ENC) shows a minimum of 1.18 e- r.m.s. and at -30°C a minimum ENC of 0.89 e- r.m.s. has been measured, corresponding to a line width of 7.8 eV FWHM for a Silicon detector.File in questo prodotto:
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