We present a CMOS Charge Sensitive Amplifier (CSA) specifically designed for low capacitance pixel or silicon drift detectors for high resolution X-ray spectrometry. The intrinsic noise of the CSA has been measured at different operating temperatures with a triangular shaping with peaking time from 0.8 μs to 102 μs. At room temperature, the intrinsic Equivalent Noise Charge (ENC) shows a minimum of 1.18 e- r.m.s. and at -30°C a minimum ENC of 0.89 e- r.m.s. has been measured, corresponding to a line width of 7.8 eV FWHM for a Silicon detector.

A CMOS Charge Sensitive Amplifier with sub-electron equivalent noise charge

BERTUCCIO, GIUSEPPE;MACERA, DANIELE;AHANGARIANABHARI, MAHDI
2014-01-01

Abstract

We present a CMOS Charge Sensitive Amplifier (CSA) specifically designed for low capacitance pixel or silicon drift detectors for high resolution X-ray spectrometry. The intrinsic noise of the CSA has been measured at different operating temperatures with a triangular shaping with peaking time from 0.8 μs to 102 μs. At room temperature, the intrinsic Equivalent Noise Charge (ENC) shows a minimum of 1.18 e- r.m.s. and at -30°C a minimum ENC of 0.89 e- r.m.s. has been measured, corresponding to a line width of 7.8 eV FWHM for a Silicon detector.
2014
2014 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
978-1-4799-6097-2
Application specific integrated circuits, charge sensitive preamplifiers, CMOS integrated circuits, low-noise amplifiers, room temperature detectors, semiconductor drift detectors, semiconductor radiation detectors, silicon radiation detectors, X-ray detectors, X-ray spectroscopy
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/985828
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