We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 109 per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×1016  W cm−2. This result can be ascribed to the nature of the long laser-pulse interaction with the target and with the expanding plasma, as well as to the optimal target geometry and composition. The possibility of an impact on future applications such as nuclear fusion without production of neutron-induced radioactivity and compact ion accelerators is anticipated.

Boron-proton nuclear-fusion enhancement induced in boron-doped silicon targets by low-contrast Pulsed Laser

BERTUCCIO, GIUSEPPE;SHI, YONGBIAO;
2014-01-01

Abstract

We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 109 per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×1016  W cm−2. This result can be ascribed to the nature of the long laser-pulse interaction with the target and with the expanding plasma, as well as to the optimal target geometry and composition. The possibility of an impact on future applications such as nuclear fusion without production of neutron-induced radioactivity and compact ion accelerators is anticipated.
Physics and Astronomy (all)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/975648
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