Study of the time response of 4H-SiC Schottky junctions for radiation high speed detection

A study of the time response of 4H-SiC radiation detectors by means of a custom simulator is presented. The detector response to X-rays has been studied under different bias conditions and interaction points within the detector active region. The contributions of electrons and holes to the current and voltage signals have been disentangled to determine their effects on the detector response speed. Signal rise-times between 340 ps and 710 ps and pulse widths of 0.93 ns and 1.12 ns Full Width at Half Maximum (FWHM) have been derived, in good agreement with experimental results.