In the present work, Cu2ZnSnS4 (CZTS) thin films were successfully prepared using a co-electrodeposition–annealing route, in which Cu-Zn-Sn metal precursors were deposited by a novel electrolyte formula on Mo substrate, followed by annealing in elemental sulfur environment in quartz tube furnace with N2 atmosphere. Morphological, compositional and structural features of the films were investigated using scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction before and after sulfurization. Raman spectroscopy was performed after sulfurization to fully characterize the deposited films. Glow discharge optical emission spectroscopy (GDOES) has also been carried out to see how composition changes along the film thickness. Results confirmed that kesterite structure of CZTS has been well formed after sulfurization of the film. It was also observed that CZTS properties depend on annealing times and ramping rate during sulfurization.

CZTS layers for solar cells by an electrodeposition-annealing route

KHALIL, MD. IBRAHIM;BERNASCONI, ROBERTO;MAGAGNIN, LUCA
2014

Abstract

In the present work, Cu2ZnSnS4 (CZTS) thin films were successfully prepared using a co-electrodeposition–annealing route, in which Cu-Zn-Sn metal precursors were deposited by a novel electrolyte formula on Mo substrate, followed by annealing in elemental sulfur environment in quartz tube furnace with N2 atmosphere. Morphological, compositional and structural features of the films were investigated using scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction before and after sulfurization. Raman spectroscopy was performed after sulfurization to fully characterize the deposited films. Glow discharge optical emission spectroscopy (GDOES) has also been carried out to see how composition changes along the film thickness. Results confirmed that kesterite structure of CZTS has been well formed after sulfurization of the film. It was also observed that CZTS properties depend on annealing times and ramping rate during sulfurization.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/962614
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