Silicon Photomultipliers (SiPMs) are emerging single photon detectors used in many applications requiring large active area, photon-number resolving capability and immunity to magnetic fields. We present three families of analog SiPM fabricated in a reliable and cost-effective fully standard planar CMOS technology with a total photosensitive area of 1×1 mm2. These three families have different active areas with fill-factors (21%, 58.3%, 73.7%) comparable to those of commercial SiPM, which are developed in vertical (current flow) custom technologies. The peak photon detection efficiency in the near-UV tops at 38% (fill-factor included) comparable to commercial custom-process ones and dark count rate density is just a little higher than the best-in-class commercial analog SiPMs. Thanks to the CMOS processing, these new SiPMs can be integrated together with active components and electronics both within the microcell and on-chip, in order to act at the microcell level or to perform global pre-processing. We also report CMOS digital SiPMs in the same standard CMOS technology, based on microcells with digitalized processing, all integrated on-chip. This CMOS digital SiPMs has four 32×1 cells (128 microcells), each consisting of SPAD, active quenching circuit with adjustable dead time, digital control (to switch off noisy SPADs and readout position of detected photons), and fast trigger output signal. The achieved 20% fill-factor is still very good. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Fully CMOS analog and digital SiPMs

ZOU, YU;VILLA, FEDERICA ALBERTA;BRONZI, DANILO;TISA, SIMONE;TOSI, ALBERTO;ZAPPA, FRANCO
2015

Abstract

Silicon Photomultipliers (SiPMs) are emerging single photon detectors used in many applications requiring large active area, photon-number resolving capability and immunity to magnetic fields. We present three families of analog SiPM fabricated in a reliable and cost-effective fully standard planar CMOS technology with a total photosensitive area of 1×1 mm2. These three families have different active areas with fill-factors (21%, 58.3%, 73.7%) comparable to those of commercial SiPM, which are developed in vertical (current flow) custom technologies. The peak photon detection efficiency in the near-UV tops at 38% (fill-factor included) comparable to commercial custom-process ones and dark count rate density is just a little higher than the best-in-class commercial analog SiPMs. Thanks to the CMOS processing, these new SiPMs can be integrated together with active components and electronics both within the microcell and on-chip, in order to act at the microcell level or to perform global pre-processing. We also report CMOS digital SiPMs in the same standard CMOS technology, based on microcells with digitalized processing, all integrated on-chip. This CMOS digital SiPMs has four 32×1 cells (128 microcells), each consisting of SPAD, active quenching circuit with adjustable dead time, digital control (to switch off noisy SPADs and readout position of detected photons), and fast trigger output signal. The achieved 20% fill-factor is still very good. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Proc. SPIE 9359, Optical Components and Materials XII
978-1-62841-449-3
sezele; CMOS analog SiPMs; Single photon avalanche diode (SPAD); digital SiPMs; single photon counting; photon number resolved; photon position resolved
File in questo prodotto:
File Dimensione Formato  
2015 - Zou - Fully-CMOS analog and digital SiPM.pdf

accesso aperto

Descrizione: Articolo principale
: Publisher’s version
Dimensione 583.47 kB
Formato Adobe PDF
583.47 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/960944
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 2
social impact