We present an innovative sensor chip, exploiting backside illumination of a silicon-on-insulator (SOI) wafer integrating custom single photon avalanche diodes (SPADs), flipped and wafer-bonded on a standard CMOS wafer integrating the analog front-end circuit, in-pixel digital processing and readout electronics. Two major improvements are achieved: higher pixel density and fill-factor, since these detectors are placed on the top of the corresponding smart-pixel electronics, instead of being placed side-by-side (as in planar structures); enhanced spectral sensitivity in the near-infrared, up to 1 μm wavelength, thanks to thicker active volume within the SOI detector wafer and to the backside illumination of the active area.

Backside illuminated wafer-to-wafer bonding single photon avalanche diode array

ZOU, YU;BRONZI, DANILO;VILLA, FEDERICA ALBERTA;
2014

Abstract

We present an innovative sensor chip, exploiting backside illumination of a silicon-on-insulator (SOI) wafer integrating custom single photon avalanche diodes (SPADs), flipped and wafer-bonded on a standard CMOS wafer integrating the analog front-end circuit, in-pixel digital processing and readout electronics. Two major improvements are achieved: higher pixel density and fill-factor, since these detectors are placed on the top of the corresponding smart-pixel electronics, instead of being placed side-by-side (as in planar structures); enhanced spectral sensitivity in the near-infrared, up to 1 μm wavelength, thanks to thicker active volume within the SOI detector wafer and to the backside illumination of the active area.
Microelectronics and Electronics (PRIME), 2014 10th Conference on Ph.D. Research in
978-1-4799-4994-6
Single-photon avalanche diode (SPAD), backside illumination, indirect time-of-flight, near-infrared (NIR), silicon-on-insulator (SOI), wafer-to-wafer bonding
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/846134
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