We present the performance of a novel InGaAs/InP single-photon avalanche diode (SPAD) with high detection efficiency and low noise thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. The 25-μ mactive-area diameter detector, operated in gated-mode with ON time of tens of nanoseconds, shows very low dark count rate (few kilo-counts per second at 225 K and 5 V of excess bias), 30% photon detection efficiency at 1550 nm, low afterpulsing, and a timing response with less than 90-ps full-width at half maximum and very fast exponential tail (time constant ∼ 60 ps). Therefore, this InGaAs/InP SPAD is among the best ones ever reported in the literature.

Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

TOSI, ALBERTO;CALANDRI, NICCOLO';SANZARO, MIRKO;
2014

Abstract

We present the performance of a novel InGaAs/InP single-photon avalanche diode (SPAD) with high detection efficiency and low noise thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. The 25-μ mactive-area diameter detector, operated in gated-mode with ON time of tens of nanoseconds, shows very low dark count rate (few kilo-counts per second at 225 K and 5 V of excess bias), 30% photon detection efficiency at 1550 nm, low afterpulsing, and a timing response with less than 90-ps full-width at half maximum and very fast exponential tail (time constant ∼ 60 ps). Therefore, this InGaAs/InP SPAD is among the best ones ever reported in the literature.
sezele; Efficiency; Infrared devices; Particle beams; Photons; Semiconducting indium; Timing jitter; Dark count rate; Detection efficiency; INGaAs/InP; Near infra red; Photon counting; Single photon avalanche diode; Single photons
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/845548
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