This paper presents an experimental study on the impact of anchor losses on the quality factor (Q) of laterally vibrating AlN contour mode resonators for three different resonance frequency devices (220 MHz, 370 MHz, and 1.05 GHz). Anchors of different width (Wa) and length (La) were designed as supports for resonators having a vibrating body of identical dimensions. The results confirm that the main source of damping is associated with anchor losses at 220 MHz and interfacial losses at 1.05 GHz. Furthermore, finite element analysis (FEA) was used to model anchor losses in AlN CMRs, exhibiting excellent agreement with the measurements.

Experimental study on the impact of anchor losses on the quality factor of contour mode AlN resonators

CREMONESI, MASSIMILIANO;FRANGI, ATTILIO ALBERTO;
2013-01-01

Abstract

This paper presents an experimental study on the impact of anchor losses on the quality factor (Q) of laterally vibrating AlN contour mode resonators for three different resonance frequency devices (220 MHz, 370 MHz, and 1.05 GHz). Anchors of different width (Wa) and length (La) were designed as supports for resonators having a vibrating body of identical dimensions. The results confirm that the main source of damping is associated with anchor losses at 220 MHz and interfacial losses at 1.05 GHz. Furthermore, finite element analysis (FEA) was used to model anchor losses in AlN CMRs, exhibiting excellent agreement with the measurements.
2013
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS EUROSENSORS XXVII), 2013 Transducers Eurosensors XXVII: The 17th International Conference on
9781467359818
III-V semiconductors; Q-factor; aluminium compounds; damping; finite element analysis; micromechanical resonators; piezoelectric transducers; vibrations; wide band gap semiconductors; AlN; CMR; FEA; anchor loss impact; frequency 1.05 GHz; frequency 220 MHz; frequency 370 MHz; interfacial losses; laterally vibrating AlN contour mode resonators; quality factor; resonance frequency devices; vibrating body; Electrodes; III-V semiconductor materials; Micromechanical devices; Resonant frequency; AlN contour mode resonator; anchor losses
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/765333
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