We designed and fabricated a 25 μm active area diameter In 0.53Ga0.47As/InP Single-Photon Avalanche Diode (SPAD) with improved layer structure and diffusion geometry in order to achieve good detection efficiency (∼30% at 1550 nm), low afterpulsing (gate repetition frequency higher than 1 MHz) and very good timing performance (the timing response has a Full-Width at Half Maximum of about 57 ps at 9 V of excess bias and a fast tail with a time constant of about 30 ps).
InGaAs/InP SPAD with improved structure for sharp timing response
TOSI, ALBERTO;ACERBI, FABIO;ANTI, MICHELE;ZAPPA, FRANCO
2012-01-01
Abstract
We designed and fabricated a 25 μm active area diameter In 0.53Ga0.47As/InP Single-Photon Avalanche Diode (SPAD) with improved layer structure and diffusion geometry in order to achieve good detection efficiency (∼30% at 1550 nm), low afterpulsing (gate repetition frequency higher than 1 MHz) and very good timing performance (the timing response has a Full-Width at Half Maximum of about 57 ps at 9 V of excess bias and a fast tail with a time constant of about 30 ps).File in questo prodotto:
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2012 - Tosi - InGaAs-InP SPAD with improved structure for sharp timing response.pdf
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