In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Neel temperature (TN) along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.

Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

PETTI, DANIELA;ALBISETTI, EDOARDO;BERTACCO, RICCARDO
2013

Abstract

In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Neel temperature (TN) along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.
Antiferromagnet spintronics
File in questo prodotto:
File Dimensione Formato  
APL AFspintronics 13.pdf

Accesso riservato

: Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione 651.64 kB
Formato Adobe PDF
651.64 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/759243
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 52
  • ???jsp.display-item.citation.isi??? 51
social impact