An automatic dual port static RAM (DPSRAM) generator based on a process-independent design methodology for double metal CMOS technology is described. An innovative architecture, using modular structures and cutoff transistors, has been designed to maintain the same performance independent of the array size, and to minimize the basic cell area. The use of the process-independent approach allows for an automatic mapping into different target CMOS technologies including submicron processes. Two DPSRAM blocks of 512 words by 8 b, included in a 100K-transistor cell-based design have been diffused and tested successfully
Ramgen: a dual port static RAM generator
SILVANO, CRISTINA;
1992-01-01
Abstract
An automatic dual port static RAM (DPSRAM) generator based on a process-independent design methodology for double metal CMOS technology is described. An innovative architecture, using modular structures and cutoff transistors, has been designed to maintain the same performance independent of the array size, and to minimize the basic cell area. The use of the process-independent approach allows for an automatic mapping into different target CMOS technologies including submicron processes. Two DPSRAM blocks of 512 words by 8 b, included in a 100K-transistor cell-based design have been diffused and tested successfullyFile in questo prodotto:
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