Silicon Carbide (SiC) is a wide bandgap semiconductor with outstanding physical properties for realizing ionizing radiation detectors. We present the manufacturing, electrical and spectroscopic characterization of a prototype SiC microstrip detector constituted by 32 strips, 2 mm long, 25 mu m wide with 55 mu m pitch. The detectors have been fabricated on 115 mu m thick undoped epitaxial 4H-SiC using Ni-SiC Schottky junctions. The measured leakage currents are below 5 fA at +25C and 0.6 pA at +107C with internal electric fields up to 30 kV/cm. X-ray spectra from Fe-55 and Am-241 with energy resolution of 224 eV FWHM and 249 eV FWHM (12-13.5 electrons r.m.s.) have been acquired at +20C and +80C, respectively.
Silicon Carbide Microstrip Detectors For High Resolution X-Ray Spectroscopy
BERTUCCIO, GIUSEPPE;PUGLISI, DONATELLA;
2012-01-01
Abstract
Silicon Carbide (SiC) is a wide bandgap semiconductor with outstanding physical properties for realizing ionizing radiation detectors. We present the manufacturing, electrical and spectroscopic characterization of a prototype SiC microstrip detector constituted by 32 strips, 2 mm long, 25 mu m wide with 55 mu m pitch. The detectors have been fabricated on 115 mu m thick undoped epitaxial 4H-SiC using Ni-SiC Schottky junctions. The measured leakage currents are below 5 fA at +25C and 0.6 pA at +107C with internal electric fields up to 30 kV/cm. X-ray spectra from Fe-55 and Am-241 with energy resolution of 224 eV FWHM and 249 eV FWHM (12-13.5 electrons r.m.s.) have been acquired at +20C and +80C, respectively.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
