In this work, we provide a detailed electrical and physical characterization of the over-reset (OR) state in terms of amorphous volume shape/thickness, activation energy for conduction, time drift exponent, 1/f noise intensity and threshold voltage. Experimental data are compared with simulations accounting for both the transport and switching mechanisms. Comparison highlights that OR is due to a reversible modification of the active material in the amorphous volume.
Investigation of Over-Reset programming in Phase Change Memory
VARESI, ENRICO;RIZZI, MAURIZIO;IELMINI, DANIELE
2012-01-01
Abstract
In this work, we provide a detailed electrical and physical characterization of the over-reset (OR) state in terms of amorphous volume shape/thickness, activation energy for conduction, time drift exponent, 1/f noise intensity and threshold voltage. Experimental data are compared with simulations accounting for both the transport and switching mechanisms. Comparison highlights that OR is due to a reversible modification of the active material in the amorphous volume.File in questo prodotto:
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