Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D0 and D- states; Hubbard band formation due to the inter-donor coupling.

Quantum transport in deterministically implanted single-donors in Si FETs

GUAGLIARDO, FILIPPO;FERRARI, GIORGIO;
2011

Abstract

Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D0 and D- states; Hubbard band formation due to the inter-donor coupling.
Electron Devices Meeting (IEDM), 2011 IEEE International
9781457705069
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/661974
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