Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D0 and D- states; Hubbard band formation due to the inter-donor coupling.
Quantum transport in deterministically implanted single-donors in Si FETs
GUAGLIARDO, FILIPPO;FERRARI, GIORGIO;
2011-01-01
Abstract
Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D0 and D- states; Hubbard band formation due to the inter-donor coupling.File in questo prodotto:
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