We describe a source of noise in thin-junction silicon single-photon avalanche diode arising after strong illumination either during the ON (voltage above breakdown) or the OFF (voltage below breakdown) time. It increases the background noise with respect to primary dark count rate similarly to the afterpulsing process, but it is not related to a previous detector ignition. The amount of noise is linearly dependent on the power of light impinging on the detector and time constants are independent of the electric field. This phenomenon is the main limiting factor for the dynamic-range during time-gated measurements in condition of strong illumination.

Afterpulse-like noise limits dynamic range in time-gated applications of thin-junction silicon single-photon avalanche diode

DALLA MORA, ALBERTO;CONTINI, DAVIDE;PIFFERI, ANTONIO GIOVANNI;CUBEDDU, RINALDO;TOSI, ALBERTO;ZAPPA, FRANCO
2012

Abstract

We describe a source of noise in thin-junction silicon single-photon avalanche diode arising after strong illumination either during the ON (voltage above breakdown) or the OFF (voltage below breakdown) time. It increases the background noise with respect to primary dark count rate similarly to the afterpulsing process, but it is not related to a previous detector ignition. The amount of noise is linearly dependent on the power of light impinging on the detector and time constants are independent of the electric field. This phenomenon is the main limiting factor for the dynamic-range during time-gated measurements in condition of strong illumination.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/661256
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