A methodology for the investigation of CMOS variability using statistical measurements (spot, IV and CV) on single CMOS devices and matched pairs has been presented. Results on 180 nm and 90 nm technologies have been discussed. An extension of the available variability models has been proposed to account for the experimental spread of the absolute threshold voltage values. Variability of carrier mobility and its dependence on halo doping has been pointed out
Characterization and modeling methodology for the evaluation of statistical variation of MOSFETs
LACAITA, ANDREA LEONARDO
2012-01-01
Abstract
A methodology for the investigation of CMOS variability using statistical measurements (spot, IV and CV) on single CMOS devices and matched pairs has been presented. Results on 180 nm and 90 nm technologies have been discussed. An extension of the available variability models has been proposed to account for the experimental spread of the absolute threshold voltage values. Variability of carrier mobility and its dependence on halo doping has been pointed outFile in questo prodotto:
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2012_ICMTS_Bortesi_Characterization and modeling metodology for the evaluation of statistical variation of MOSFETs.pdf
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