Defect-free bicomponent fibers of poly{[N,N′-bis(2-octyl-dodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}/poly(ethyleneoxide) P(NDI2OD-T2)/PEO are fabricated by means of electrospinning and rinsed with a selective solvent to afford pure P(NDI2OD-T2) while maintaining a fibrous morphology. The elongation strength applied on the spun jet by the high electrical field induces a preferential orientation of polymer chains. An electron mobility analogous to the best obtained with a thin film-based device is achieved in single fiber transistors, and the results are unaffected by the dielectric surface treatment.

n-Type Semiconducting Polymer Fibers

CANESI, ELEONORA VALERIA;BIANCO, ANDREA;CAIRONI, MARIO;BERTARELLI, CHIARA
2012-01-01

Abstract

Defect-free bicomponent fibers of poly{[N,N′-bis(2-octyl-dodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}/poly(ethyleneoxide) P(NDI2OD-T2)/PEO are fabricated by means of electrospinning and rinsed with a selective solvent to afford pure P(NDI2OD-T2) while maintaining a fibrous morphology. The elongation strength applied on the spun jet by the high electrical field induces a preferential orientation of polymer chains. An electron mobility analogous to the best obtained with a thin film-based device is achieved in single fiber transistors, and the results are unaffected by the dielectric surface treatment.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/656371
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