A long-standing puzzle regarding the Si(111) - 2 x 1 surface has been solved. The surface energy gap previously determined by photoemission on heavily n-doped crystals was not compatible with a strongly bound exciton known from other considerations to exist. New low-temperature angle-resolved photoemission and scanning tunneling microscopy data, together with theory, unambiguously reveal that isomers with opposite bucklings and different energy gaps coexist on such surfaces. The subtle energetics between the isomers, dependent on doping, leads to a reconciliation of all previous results.

Coexistence of Negatively and Positively Buckled Isomers on n^{+}-Doped Si(111)-2×1

BUSSETTI, GIANLORENZO;
2011

Abstract

A long-standing puzzle regarding the Si(111) - 2 x 1 surface has been solved. The surface energy gap previously determined by photoemission on heavily n-doped crystals was not compatible with a strongly bound exciton known from other considerations to exist. New low-temperature angle-resolved photoemission and scanning tunneling microscopy data, together with theory, unambiguously reveal that isomers with opposite bucklings and different energy gaps coexist on such surfaces. The subtle energetics between the isomers, dependent on doping, leads to a reconciliation of all previous results.
PHYSICAL REVIEW LETTERS
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/637372
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