Chalcogenide glass (ChG) materials have made in-roads into infrared photonic devices in both thin film and fiber form. Compact, on-chip, planar chalcogenide devices produced by CMOS-compatible processing techniques have been shown to exhibit comparable or superior performance to those of commercially available surface plasmon resonance (SPR)-based systems when evaluated for device sensitivity, component footprint, and/or sensing response. Utilizing attributes of chalcogenide glasses often considered “material limitations” (including low glass transition, limited solvent-specific chemical durability and near-bandgap photosensitivity), we demonstrate enhancements to ChG device performance using thermal reflow, solution-based glass film deposition and near bandgap film illumination. Post-fabrication trimming based on the intrinsic photosensitivity of the chalcogenide glass are exploited to compensate for fabrication imperfections of ring resonators

Exploiting intrinsic material properties for improved integrated chalcogenide waveguide resonators for mid-IR sensing

CANCIAMILLA, ANTONIO;MORICHETTI, FRANCESCO;MELLONI, ANDREA IVANO
2011-01-01

Abstract

Chalcogenide glass (ChG) materials have made in-roads into infrared photonic devices in both thin film and fiber form. Compact, on-chip, planar chalcogenide devices produced by CMOS-compatible processing techniques have been shown to exhibit comparable or superior performance to those of commercially available surface plasmon resonance (SPR)-based systems when evaluated for device sensitivity, component footprint, and/or sensing response. Utilizing attributes of chalcogenide glasses often considered “material limitations” (including low glass transition, limited solvent-specific chemical durability and near-bandgap photosensitivity), we demonstrate enhancements to ChG device performance using thermal reflow, solution-based glass film deposition and near bandgap film illumination. Post-fabrication trimming based on the intrinsic photosensitivity of the chalcogenide glass are exploited to compensate for fabrication imperfections of ring resonators
2011
TLC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/634959
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