A BEM formulation is applied to the extraction of series parameters of interconnects on lossy silicon substrate. The numerical formulation can take into account both a semi-infinite homogeneous conductive substrate and a homogeneous conductive substrate of finite thickness with backside metallization and needs the discretization of only the contours of the traces.
Boundary element computation of line parameters of on-chip interconnects on lossy silicon substrate
LI, DONGWEI;DI RIENZO, LUCA
2011-01-01
Abstract
A BEM formulation is applied to the extraction of series parameters of interconnects on lossy silicon substrate. The numerical formulation can take into account both a semi-infinite homogeneous conductive substrate and a homogeneous conductive substrate of finite thickness with backside metallization and needs the discretization of only the contours of the traces.File in questo prodotto:
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