InGaAs/InP Single-Photon Avalanche Diodes (SPADs) have good performance to be successfully employed in many applications that demand single photon detection in the 1 - 1.7 μm wavelength range. However, in order to fully exploit such detectors, they have to be operated in optimized working conditions using dedicated electronics. We present the design and experimental characterization of a high-performance compact detection module able to operate at best InGaAs/InP SPADs. The module includes a pulse generator for gating the detector, a front-end circuit for avalanche sensing, a fast circuitry for detector quenching and resetting and some sub-circuits for signal conditioning. Experimental measurements prove the state-of-the-art performance and its great flexibility to fit the different applications.

Photon counting module based on InGaAs/InP Single-Photon Avalanche Diodes for near-infrared counting up to 1.7 µm

BAHGAT SHEHATA, ANDREA;SCARCELLA, CARMELO;TOSI, ALBERTO;DELLA FRERA, ADRIANO
2011

Abstract

InGaAs/InP Single-Photon Avalanche Diodes (SPADs) have good performance to be successfully employed in many applications that demand single photon detection in the 1 - 1.7 μm wavelength range. However, in order to fully exploit such detectors, they have to be operated in optimized working conditions using dedicated electronics. We present the design and experimental characterization of a high-performance compact detection module able to operate at best InGaAs/InP SPADs. The module includes a pulse generator for gating the detector, a front-end circuit for avalanche sensing, a fast circuitry for detector quenching and resetting and some sub-circuits for signal conditioning. Experimental measurements prove the state-of-the-art performance and its great flexibility to fit the different applications.
-
9781424491384
sezele
File in questo prodotto:
File Dimensione Formato  
45_Shehata_13.2.pdf

Accesso riservato

: Altro materiale allegato
Dimensione 1.93 MB
Formato Adobe PDF
1.93 MB Adobe PDF   Visualizza/Apri
45_Shehata_13.2.pdf

Accesso riservato

: Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione 1.93 MB
Formato Adobe PDF
1.93 MB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/607906
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? ND
social impact