InGaAs/InP Single-Photon Avalanche Diodes (SPADs) have good performance to be successfully employed in many applications that demand single photon detection in the 1 - 1.7 μm wavelength range. However, in order to fully exploit such detectors, they have to be operated in optimized working conditions using dedicated electronics. We present the design and experimental characterization of a high-performance compact detection module able to operate at best InGaAs/InP SPADs. The module includes a pulse generator for gating the detector, a front-end circuit for avalanche sensing, a fast circuitry for detector quenching and resetting and some sub-circuits for signal conditioning. Experimental measurements prove the state-of-the-art performance and its great flexibility to fit the different applications.

Photon counting module based on InGaAs/InP Single-Photon Avalanche Diodes for near-infrared counting up to 1.7 µm

BAHGAT SHEHATA, ANDREA;SCARCELLA, CARMELO;TOSI, ALBERTO;DELLA FRERA, ADRIANO
2011-01-01

Abstract

InGaAs/InP Single-Photon Avalanche Diodes (SPADs) have good performance to be successfully employed in many applications that demand single photon detection in the 1 - 1.7 μm wavelength range. However, in order to fully exploit such detectors, they have to be operated in optimized working conditions using dedicated electronics. We present the design and experimental characterization of a high-performance compact detection module able to operate at best InGaAs/InP SPADs. The module includes a pulse generator for gating the detector, a front-end circuit for avalanche sensing, a fast circuitry for detector quenching and resetting and some sub-circuits for signal conditioning. Experimental measurements prove the state-of-the-art performance and its great flexibility to fit the different applications.
2011
-
9781424491384
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/607906
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