We investigate the eects of backscattering induced by waveguide sidewall roughness in high-index contrast integrated photonic circuits. Backscattered power is experimentally observed in silicon on insulator optical nanowires, showing its dependence on the waveguide geometrical and optical parameters, and in micro-rings, demonstrating that in an optical resonator the backscattering is enhanced according to the square of its quality factor. From our results, backscattering emerges as one of the most severe impairment in densely integrated photonic devices, capable to dramatically affect their expected behaviour.

Backscattering in Silicon Photonic Devices

MORICHETTI, FRANCESCO;CANCIAMILLA, ANTONIO;FERRARI, CARLO;MELLONI, ANDREA IVANO;
2010-01-01

Abstract

We investigate the eects of backscattering induced by waveguide sidewall roughness in high-index contrast integrated photonic circuits. Backscattered power is experimentally observed in silicon on insulator optical nanowires, showing its dependence on the waveguide geometrical and optical parameters, and in micro-rings, demonstrating that in an optical resonator the backscattering is enhanced according to the square of its quality factor. From our results, backscattering emerges as one of the most severe impairment in densely integrated photonic devices, capable to dramatically affect their expected behaviour.
2010
File in questo prodotto:
File Dimensione Formato  
XVIII_RiNEm_Proc.pdf

Accesso riservato

: Pre-Print (o Pre-Refereeing)
Dimensione 328.59 kB
Formato Adobe PDF
328.59 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/582491
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact