p-doped hydrogenated nanocrystalline silicon (p-nc-Si:H) is one of the most critical layers in thin film silicon solar cells. LEPECVD is a new technique for the growth of nc-Si at high growth rate without compromising the layer quality, using a dense but low energy plasma. Thin p-nc-Si:H layers are grown on glass and ZnO:Al coated glass and their structural and electrical properties are investigated as a function of the silane dilution (d) and of the doping ratio (DR). The influence of the substrate on the structural properties is investigated and discussed. The incubation layer is clearly observed on both substrate types and its thickness is estimated. LEPECVD distinguishes itself from other high growth rate methods by a very low impurity distribution coefficient to obtain a comparable conductivity and boron density. The conduction path is shown to be dependent on the density of boron in the layer while a significant decrease of conductivity at high DR is not observed in the studied range

Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications

CHRASTINA, DANIEL;ISELLA, GIOVANNI;
2010-01-01

Abstract

p-doped hydrogenated nanocrystalline silicon (p-nc-Si:H) is one of the most critical layers in thin film silicon solar cells. LEPECVD is a new technique for the growth of nc-Si at high growth rate without compromising the layer quality, using a dense but low energy plasma. Thin p-nc-Si:H layers are grown on glass and ZnO:Al coated glass and their structural and electrical properties are investigated as a function of the silane dilution (d) and of the doping ratio (DR). The influence of the substrate on the structural properties is investigated and discussed. The incubation layer is clearly observed on both substrate types and its thickness is estimated. LEPECVD distinguishes itself from other high growth rate methods by a very low impurity distribution coefficient to obtain a comparable conductivity and boron density. The conduction path is shown to be dependent on the density of boron in the layer while a significant decrease of conductivity at high DR is not observed in the studied range
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/581950
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