Among the planarization methods, electrochemical chemical mechanical polishing (e-CMP) is recognized as the most eligible for future applications in the electronic industry. The introduction of porous low-k dielectric materials into semiconductor devices requires the development of low downforce Cu e-CMP. It is well-known that inhibitors play a key-role in the e-CMP process. In this study, the effect of different additive (like as benzotriazole (BTA) and 5-phenyl-1H-tetrazole (PTA)) on e-CMP of copper was investigated.

Effect of organic additives on copper dissolution for e-CMP

COJOCARU, PAULA;MUSCOLINO, FABIO;MAGAGNIN, LUCA
2010-01-01

Abstract

Among the planarization methods, electrochemical chemical mechanical polishing (e-CMP) is recognized as the most eligible for future applications in the electronic industry. The introduction of porous low-k dielectric materials into semiconductor devices requires the development of low downforce Cu e-CMP. It is well-known that inhibitors play a key-role in the e-CMP process. In this study, the effect of different additive (like as benzotriazole (BTA) and 5-phenyl-1H-tetrazole (PTA)) on e-CMP of copper was investigated.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/580632
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