The depinning field of a domain wall in a permalloy nanostructure can be used to detect the presence of a magnetic particle. In this device the displacement of the domain wall in a sweeping magnetic field produces a variation of the voltage drop across a corner due to the anisotropic magnetoresistance effect and hence an electrical signal. In this paper we use micromagnetic simulations to calculate the output signal of a particularly shaped device in the presence of a single synthetic antiferromagnetic nanoparticle. The calculated magnetoresistive signal is in good agreement with corresponding experimental data.
Detection of a single synthetic antiferromagnetic nanoparticle with an AMR nanostructure: comparison between simulations and experiments
DONOLATO, MARCO;GOBBI, MARCO;VAVASSORI, PAOLO;CANTONI, MATTEO;BERTACCO, RICCARDO
2010-01-01
Abstract
The depinning field of a domain wall in a permalloy nanostructure can be used to detect the presence of a magnetic particle. In this device the displacement of the domain wall in a sweeping magnetic field produces a variation of the voltage drop across a corner due to the anisotropic magnetoresistance effect and hence an electrical signal. In this paper we use micromagnetic simulations to calculate the output signal of a particularly shaped device in the presence of a single synthetic antiferromagnetic nanoparticle. The calculated magnetoresistive signal is in good agreement with corresponding experimental data.File in questo prodotto:
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beads J_Physics_Conf_series_200_122001_2010.pdf
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