We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly N,N -bis 2-octyldodecyl -naphthalene-1,4,5,8-bis dicarboximide -2,6-diyl -alt-5,5 - 2,2 -bithiophene . Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm 2 / V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 k cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.

Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors

NATALI, DARIO ANDREA NICOLA;
2010-01-01

Abstract

We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly N,N -bis 2-octyldodecyl -naphthalene-1,4,5,8-bis dicarboximide -2,6-diyl -alt-5,5 - 2,2 -bithiophene . Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm 2 / V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 k cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.
2010
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/574765
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