Improvements on InGaAs/InP Single Photon Avalanche Diodes (SPADs) make them very promising for many NIR single-photon counting applications. In order to fully exploit such detectors, it is mandatory to operate them in optimized working conditions and in association with proper front-end electronics. New InGaAs/InP SPADs provide low dark-count rate at moderately low temperatures. They also show good photon detection efficiency and quite low time jitter in the near-infrared range. We report and compare the performance of two generations of InGaAs/InP SPADs working at 1550 nm.
Characterization of InGaAs/InP Single-Photon Avalanche Diodes
TOSI, ALBERTO;ACERBI, FABIO;DALLA MORA, ALBERTO;ZAPPA, FRANCO
2010-01-01
Abstract
Improvements on InGaAs/InP Single Photon Avalanche Diodes (SPADs) make them very promising for many NIR single-photon counting applications. In order to fully exploit such detectors, it is mandatory to operate them in optimized working conditions and in association with proper front-end electronics. New InGaAs/InP SPADs provide low dark-count rate at moderately low temperatures. They also show good photon detection efficiency and quite low time jitter in the near-infrared range. We report and compare the performance of two generations of InGaAs/InP SPADs working at 1550 nm.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
TuC5.pdf
Accesso riservato
:
Altro materiale allegato
Dimensione
1.38 MB
Formato
Adobe PDF
|
1.38 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
