To characterize the effective fracture energy GIC of polysilicon wafers at room temperature, an on-chip MEMS test structure has been designed and fabricated. The device can provide fatigue pre-cracking at the notch apex and subsequently impose a monotonical load up to failure. The proposed procedure combines the experimental data with outcomes of numerical simulations. A continuously monitored decrease in stiffness of the system is linked to the crack length and the effective fracture energy for the non-standard geometry of the testing device. An average value of GIC=12.01.8 N m-1 is found. In order to have a deeper insight into the local fracture behaviour, these values are then used in numerical micro-scale analyses taking into account for material heterogeneity due to the grain structure and reproducing, with a cohesive approach, the crack propagation process.
A microsystem for the fracture characterization of polysilicon at the micro scale.
CORIGLIANO, ALBERTO;GHISI, ALDO FRANCESCO;LANGFELDER, GIACOMO;LONGONI, ANTONIO FRANCESCO;ZARAGA, FEDERICO;
2011-01-01
Abstract
To characterize the effective fracture energy GIC of polysilicon wafers at room temperature, an on-chip MEMS test structure has been designed and fabricated. The device can provide fatigue pre-cracking at the notch apex and subsequently impose a monotonical load up to failure. The proposed procedure combines the experimental data with outcomes of numerical simulations. A continuously monitored decrease in stiffness of the system is linked to the crack length and the effective fracture energy for the non-standard geometry of the testing device. An average value of GIC=12.01.8 N m-1 is found. In order to have a deeper insight into the local fracture behaviour, these values are then used in numerical micro-scale analyses taking into account for material heterogeneity due to the grain structure and reproducing, with a cohesive approach, the crack propagation process.File | Dimensione | Formato | |
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