InGaAs/InP SPADs for near-infrared applications: device operating conditions and dedicated electronics

InGaAs/InP Single-Photon Avalanche Diodes (SPADs) have recently shown good performances in terms of dark count rate and detection efficiency, making them suitable for many NIR single-photon counting applications. However, it is mandatory to operate InGaAs/InP SPADs in optimized working conditions and in association with proper dedicated electronics. A complete characterization of primary dark count rate, afterpulsing, detection efficiency and timing jitter is required in order to be able to tailor the working conditions to the specific request. Moreover, very fast quenching circuits can efficiently minimize afterpulsing, while low-jitter front-end circuits detect the avalanche pulse with high timing precision.