The electrical properties of cluster-assembled nanostructured palladium oxide _ns-PdOx_ thin films grown by supersonic cluster beam deposition have been characterized by means of a customized ac current-sensing atomic force microscope. Scanning impedance microscopy is shown to provide a deep picture of the electrical properties of thin nanostructured interfaces even in the case of very soft and poorly adherent films. In particular, the dielectric constant of ns-PdOx can be quantitatively determined as well as its I-V characteristics. Moreover, the measurement of the tip-sample parasitic capacitance can be exploited to probe the overall mesoscale conductive character of thin films and to give a complementary and more precise view of the oxidation of ns-PdOx obtained by x-ray photoemission spectroscopy.
Nanoscale electrical properties of cluster-assembled palladium oxide thin films
FERRARI, GIORGIO;SAMPIETRO, MARCO;
2009-01-01
Abstract
The electrical properties of cluster-assembled nanostructured palladium oxide _ns-PdOx_ thin films grown by supersonic cluster beam deposition have been characterized by means of a customized ac current-sensing atomic force microscope. Scanning impedance microscopy is shown to provide a deep picture of the electrical properties of thin nanostructured interfaces even in the case of very soft and poorly adherent films. In particular, the dielectric constant of ns-PdOx can be quantitatively determined as well as its I-V characteristics. Moreover, the measurement of the tip-sample parasitic capacitance can be exploited to probe the overall mesoscale conductive character of thin films and to give a complementary and more precise view of the oxidation of ns-PdOx obtained by x-ray photoemission spectroscopy.File | Dimensione | Formato | |
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