The problem of in situ monitoring the film thickness by quartz microbalance during vacuum deposition of organic-molecular semiconductors is addressed herein by setting a procedure for sensor calibration based on ex situ analysis of the deposited molecular film by atomic-force microscopy measurements. The procedure is applied to the growth of molecular-organic thin films on silica. Some physical parameters of the materials are deduced.
Thickness measurements by quartz microbalance during thin-film growth by organic-molecular-beam deposition
PINOTTI, ERMANNO;
2004-01-01
Abstract
The problem of in situ monitoring the film thickness by quartz microbalance during vacuum deposition of organic-molecular semiconductors is addressed herein by setting a procedure for sensor calibration based on ex situ analysis of the deposited molecular film by atomic-force microscopy measurements. The procedure is applied to the growth of molecular-organic thin films on silica. Some physical parameters of the materials are deduced.File in questo prodotto:
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Ermanno Pinotti - Paper ID UGOV 567616 .pdf
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