A novel encapsulation structure to protect organic thin film transistors against oxygen and moisture contaminations is presented. The sealing architecture is comprised of three-layers: aluminum oxide deposited by means of Atomic Layer Deposition is the actual capping layer, while cross-linked poly-vinylphenol and poly-vinylphenol prevent the contamination/damage of the underlying organic semiconductor during the oxide growth. The process has negligible impact on device mobility but it enables poly-3-hexylthiophene based transistors to operate with an on/off ratio in excess of 103 even after 100 days of continuous ambient air exposure.

Multi layer structure for encapsulation of organic transistors

FUMAGALLI, LUCA;BINDA, MADDALENA;NATALI, DARIO ANDREA NICOLA;SAMPIETRO, MARCO;
2009-01-01

Abstract

A novel encapsulation structure to protect organic thin film transistors against oxygen and moisture contaminations is presented. The sealing architecture is comprised of three-layers: aluminum oxide deposited by means of Atomic Layer Deposition is the actual capping layer, while cross-linked poly-vinylphenol and poly-vinylphenol prevent the contamination/damage of the underlying organic semiconductor during the oxide growth. The process has negligible impact on device mobility but it enables poly-3-hexylthiophene based transistors to operate with an on/off ratio in excess of 103 even after 100 days of continuous ambient air exposure.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/565017
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