In this work we address the well-posedness of the steady-state and transient problems stemming from the coupling of a network of lumped electric elements and a PDE model of heat diffusion in the chip substrate. In particular we consider the thermal element model presented in [1] and we prove that it can be controlled by any combination of voltage sources (imposing the average current in a region of the chip) and current sources (imposing the Joule power per unit area produced in a region) connected to its temperature nodes. This result justifies the implementation of the element as a linear n-port conductance as carried out in [2].
Analysis of a PDE Thermal Element Model for Electrothermal Circuit Simulation
DE FALCO, CARLO
2010-01-01
Abstract
In this work we address the well-posedness of the steady-state and transient problems stemming from the coupling of a network of lumped electric elements and a PDE model of heat diffusion in the chip substrate. In particular we consider the thermal element model presented in [1] and we prove that it can be controlled by any combination of voltage sources (imposing the average current in a region of the chip) and current sources (imposing the Joule power per unit area produced in a region) connected to its temperature nodes. This result justifies the implementation of the element as a linear n-port conductance as carried out in [2].File | Dimensione | Formato | |
---|---|---|---|
ali2.pdf
Accesso riservato
:
Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione
110.75 kB
Formato
Adobe PDF
|
110.75 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.