In this communication, we deal with the numerical approximation of a Quantum Drift–Diffusion model capable of describing tunneling effects through the thin oxide barrier in nanoscale semiconductor devices. We propose a novel formulation of the mathematical model, based on a spatially heterogeneous approach, and a generalization of the Gummel decoupled algorithm, widely adopted in the case of the Drift-Diffusion system. Then, we address the finite element discretization of the linearized problems obtained after decoupling, proving well-posedness and a discrete maximum principle for each of them. Finally, we validate the physical accuracy and numerical stability of the proposed algorithms on the numerical simulation of a real-life nanoscale device.

Quantum Corrected Drift-Diffusion Modeling and Simulation of Tunneling Effects in Nanoscale Semiconductor Devices

DE FALCO, CARLO;SACCO, RICCARDO
2006

Abstract

In this communication, we deal with the numerical approximation of a Quantum Drift–Diffusion model capable of describing tunneling effects through the thin oxide barrier in nanoscale semiconductor devices. We propose a novel formulation of the mathematical model, based on a spatially heterogeneous approach, and a generalization of the Gummel decoupled algorithm, widely adopted in the case of the Drift-Diffusion system. Then, we address the finite element discretization of the linearized problems obtained after decoupling, proving well-posedness and a discrete maximum principle for each of them. Finally, we validate the physical accuracy and numerical stability of the proposed algorithms on the numerical simulation of a real-life nanoscale device.
Scientific Computing in Electrical Engineering SCEE 2004
9783540328612
9783540328629
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/561563
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