A comparative benchmark of the linearity properties of two of the most popular compact transistor models (BSIM4 and PSP) for nanometre process technologies (45 nm) is presented. The determination of the IP3 compression point for a particular network configuration, which is often encountered in RF mixers, is used as a comparison vehicle. Parameters of both the PSP and BSIM4 models adopted in the com- parison have been fitted to a leading-edge 45 nm RF technology. The benchmarks show that the BSIM4 model is unable to capture the IP3 compression point whereas the PSP model yields the expected behaviour, thus enabling the determination of the correct value of IIP3.

Accuracy of PSP and BSIM4 Models in the Determination of the IP3Compression Point

BRAMBILLA, ANGELO MAURIZIO;STORTI GAJANI, GIANCARLO;
2009-01-01

Abstract

A comparative benchmark of the linearity properties of two of the most popular compact transistor models (BSIM4 and PSP) for nanometre process technologies (45 nm) is presented. The determination of the IP3 compression point for a particular network configuration, which is often encountered in RF mixers, is used as a comparison vehicle. Parameters of both the PSP and BSIM4 models adopted in the com- parison have been fitted to a leading-edge 45 nm RF technology. The benchmarks show that the BSIM4 model is unable to capture the IP3 compression point whereas the PSP model yields the expected behaviour, thus enabling the determination of the correct value of IIP3.
2009
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/560540
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